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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
QFET
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
Features
* 10.5 A, 400V, RDS(on) = * Low Crss ( typical 85pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability 0.5 @VGS = 10 V * Low gate charge ( typical 28 nC)
(R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
!

G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQP11N40C
10.5 6.6 42
FQPF11N40C
400 10.5 * 6.6 * 42 * 30 360 11 13.5 4.5
Units
V A A A V mJ A mJ V/ns
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
(Note 2) (Note 1) (Note 1) (Note 3)
135 1.07 -55 to +150 300
44 0.35
W W/C C C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP11N40C
0.93 0.5 62.5
FQPF11N40C
2.86 -62.5
Units
C/W C/W C/W
(c)2005 Fairchild Semiconductor Corporation
1
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FQP11N40C/FQPF11N40C Rev. C
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FQP11N40C FQPF11N40C Device FQP11N40C FQPF11N40C Package TO-220 TO-220F Reel Size --Tape Width --Quantity 50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
400 ------
-0.54 -----
--1 10 100 -100
V V/C A A nA nA
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.25 A VDS = 40 V, ID = 5.25 A
(Note 4)
2.0 ---
-0.43 7.1
4.0 0.53 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---840 250 85 1090 325 110 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 10.5 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 200 V, ID = 10.5 A, RG = 25
--------
14 89 81 81 28 4 15
40 190 170 170 35 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10.5 A VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/s
----(Note 4)
---290 2.4
10.5 42 1.4 ---
A A V ns C
--
FQP11N40C/FQPF11N40C Rev. C
2
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150C -55C 25C
10
0
10
0
Notes : 1. 250s Pulse Test 2. TC = 25C
Notes : 1. VDS = 40V
10
-1
10
0
10
1
10
-1
2. 250s Pulse Test
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
2.0
RDS(ON) [], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
VGS = 10V
1.5
10
1
1.0
10
0
VGS = 20V
0.5
Note : TJ = 25C
150C 25C
10
-1
Notes : 1. VGS = 0V 2. 250s Pulse Test
0
5
10
15
20
25
30
35
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000 1800 1600 1400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V
Capacitance [pF]
Ciss Coss
8
1200 1000 800 600 400 200 0 -1 10
0
VDS = 400V
6
Crss
Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 10.5A
0
10
10
1
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQP11N40C/FQPF11N40C Rev. C
3
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 5.25 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250A
0.5
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9-1. Maximum Safe Operating Area of FQP3N50C
Operation in This Area is Limited by R DS(on)
Figure 9-2. Maximum Safe Operating Area of FQPF3N50C
Operation in This Area is Limited by R DS(on)
10
2
10
2
10 s
ID, Drain Current [A]
ID, Drain Current [A]
100 s
10
1
10 s 100 s
10
1
1 ms 10 ms 100 ms DC
1 ms 10 ms 100 ms
10
0
10
0
DC
Notes : 1. TC = 25C 2. TJ = 15C 3. Single Pulse
Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse
-1
10
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. MaximumDrain Current
12
10
ID, Drain Current [A]
8
6
4
2
0 25
50
75
100
125
150
TC, Case Temperature [C]
FQP11N40C/FQPF11N40C Rev. C
4
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve of FQP3N50C
10
0
D = 0 .5
(t), Thermal Response
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s i n g le p u ls e
N o te s : 1 . Z J C ( t) = 0 .9 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1 t2
0
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. ransient Thermal Response Curve of FQPF3N50C
Z JC Thermal Response (t),
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C t) = 2 .8 6 /W M a x . ( 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
10
-1
0 .0 2 0 .0 1
PDM
s in g le p u ls e
t1
10
-2
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FQP11N40C/FQPF11N40C Rev. C
5
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG 10V VGS
RL VDD
VDS
90%
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
FQP11N40C/FQPF11N40C Rev. C
6
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FQP11N40C/FQPF11N40C Rev. C
7
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C
8
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C
9
15.87 0.20
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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
10 FQP11N40C/FQPF11N40C Rev. C
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